Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems.

• IGBT Chips: The core of the module, combining the high input impedance of MOSFETs and the low on-state voltage drop of bipolar transistors, enabling high-speed switching and low losses.
• Free-Wheeling Diodes (FWDs): Connected in anti-parallel with IGBTs to release energy stored in inductive loads, preventing voltage spikes from damaging devices.
• Drive and Protection Circuits: Integrated with functions such as signal isolation, overcurrent/overvoltage protection, and temperature monitoring to ensure stable module operation.
• Packaging Technology: Utilizes ceramic substrates, copper baseplates, etc., optimizing thermal performance (thermal resistance as low as 0.1-0.2 K/W) and enhancing electrical insulation.

• High Power Density: Modular design significantly increases power-handling capability per unit volume. For example, Infineon's PrimePACK™ modules enable hundreds of kilowatts to megawatts of output.
• High Reliability: Through redundant design, fault self-diagnosis, and thermal management technologies, modules achieve a mean time between failures (MTBF) exceeding 100,000 hours in industrial applications like variable frequency drives.
• Ease of Use: Built-in drive circuits simplify system design, allowing users to quickly deploy applications by providing only control signals and power.

• Industrial Drives: Used in motor speed control, fan/pump regulation.
• Renewable Energy Generation: In photovoltaic inverters, IGBT modules convert DC to AC for grid integration.